Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The paper describes the development of an aluminum chemical mechanical planarization process that was successfully integrated into the dual damascene technology producing 1 Gb dynamic random access memory chips meeting all yield and sheet resistance requirements. Three of the major problems of chemical mechanical polishing of Al-0.5 Cu alloys, i.e., copper plate-out on titanium liners, array erosion, and slow polish rate were solved by adding Ce4+ ions to the polishing slurry. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1385849] All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures