1 μm MOSFET VLSI Technology: Part IV—Hot-Electron Design Constraints

Abstract

An approach is described for determining the hot-electron- voltages for silicon MOSFET’s of small dimensions. The approach was followed in determining the room-temperature and the 77 K hot-electron-limited voltages for a device designed to have a minimum channel length of 1 μm. The substrate hot-electron limits were determined empirically from measurements of the emission probabilities as a function of voltage using devices of reentrant geometry. The channel hot-electron limits were determined empirically from measurements of the injection current as a function of voltage Ind from long-term stress experiments. For the 1 μm design considered, the channel hot-electron limits are lower than the substrate hot-election limits. The maximum voltage, VDS VGs, = is 4.75 V at room temperature (25°C) and 3.5 V at 77 K. More details of the voltage limits as well as the approach for determining them are discussed. Examples of circuits designed with these devices to operate within these hot-electron voltage limits are also discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.