Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells

Abstract

Quantum wells of GaSb/InAs/GaSb have been prepared by molecular beam epitaxy (MBE) with emphasis on the correlation of the growth parameters with their electronic properties as characterized by magnetotransport measurements. An electron mobility of 3.5 × 105 cm2/V s has been obtained for the first time in the presence of holes. The holes disappear at a critical InAs thickness around 60 Å resulting from a semimetal-semiconductor transition. © 1986.