Publication
IRPS 1970
Conference paper

Degradation of GaAs and Ga1-xAlxAs light emitting diodes

Abstract

Life test data on the degradation characteristics of GaAs and GaAlAs light emitting diodes are presented. The GaAs data show the effects of diode processing and impurity concentration on degradation. The AlGaAs diodes prepared during the early stages of their development were tested at various current densities and aged up to 14,000 hours.

Date

07 Apr 1970

Publication

IRPS 1970

Authors

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