Hiroshi Ito, Reinhold Schwalm
JES
The specific contact resistances of AuGe to n-type Al0.4Ga0.6As, GaAs0.6P0.4 and GaP over a range of doping concentrations (∼ 1017-1018 cm-3) have been measured. AuGeNi shows ohmic characteristics to these materials after heat treatment. The specific contact resistances of AuZn and Al to p-type Al0.4Ga0.6As, GaAs0.6P0.4 and GaP with carrier concentration ∼ 2 × 1019 cm-3 have also been investigated. AuZn contact is applicable to all three p-type materials but Al contact is only recommended to p-type GaAs0.6P0.4. © 1972.
Hiroshi Ito, Reinhold Schwalm
JES
Michiel Sprik
Journal of Physics Condensed Matter
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997