The specific contact resistances of AuGe to n-type Al0.4Ga0.6As, GaAs0.6P0.4 and GaP over a range of doping concentrations (∼ 1017-1018 cm-3) have been measured. AuGeNi shows ohmic characteristics to these materials after heat treatment. The specific contact resistances of AuZn and Al to p-type Al0.4Ga0.6As, GaAs0.6P0.4 and GaP with carrier concentration ∼ 2 × 1019 cm-3 have also been investigated. AuZn contact is applicable to all three p-type materials but Al contact is only recommended to p-type GaAs0.6P0.4. © 1972.