DEEP UV PHOTOLITHOGRAPHY WITH COMPOSITE PHOTORESISTS MADE OF POLY(OLEFIN SULFONES).

Abstract

Almost all poly(olefin sulfones) have been reported only as positive tone electron beam resists. As the only exception, poly(5-hexene-2-one sulfone) has been reported as a positive tone photoresist with or without a photosensitizer, benzophenone. Because this polymer has a carbonyl chromophore, its photosensitivity is clearly derived from the polymer structure itself. This paper reports first dry developable photoresists with poly(olefin sulfones) with photosensitizers like pyridine N-oxide, and then presents the study on composite resists made of poly(olefin sulfones) with novolac resins or with poly(p-hydroxystyrenes).