Novel one-mask self-heating pillar phase change memory
T.D. Happ, M. Breitwisch, et al.
VLSI Technology 2006
The crystallization times of Ge-Te phase change materials with variable Ge concentrations (29.5-72.4 at. %) were studied. A very strong dependence of the crystallization time on the composition for as-deposited, amorphous films was confirmed, with a minimum for the stoichiometric composition GeTe. The dependence is weaker for melt-quenched, amorphous material and crystallization times are between one to almost four orders of magnitude shorter than for as-deposited materials. This is promising for applications because recrystallization from the melt-quenched phase is the relevant process for optical and solid state memory, and fast crystallization and weak dependence on compositional variations are desirable. © 2009 American Institute of Physics.
T.D. Happ, M. Breitwisch, et al.
VLSI Technology 2006
A. Scholl, F. Nolting, et al.
Applied Physics Letters
H.Y. Cheng, T.H. Hsu, et al.
IEDM 2011
H.Y. Cheng, Matthew Brightsky, et al.
IEDM 2013