J.C. Marinace
JES
Kinetics and morphology in crystallization of unsupported amorphous silicon films are investigated by hot stage transmission electron microscopy. Crystallization occurs by thermally activated nucleation and growth processes; activation energies of 470 kJ/mol for nucleation and 280 kJ/mol for growth are obtained. Nucleation rates are observed to increase with annealing time, whereas the growth rate depends on the annealing temperature and the crystallographic growth direction. Copyright © 1978 WILEY‐VCH Verlag GmbH & Co. KGaA
J.C. Marinace
JES
Mark W. Dowley
Solid State Communications
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
Hiroshi Ito, Reinhold Schwalm
JES