Publication
physica status solidi (a)
Paper

Crystallization of amorphous silicon films

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Abstract

Kinetics and morphology in crystallization of unsupported amorphous silicon films are investigated by hot stage transmission electron microscopy. Crystallization occurs by thermally activated nucleation and growth processes; activation energies of 470 kJ/mol for nucleation and 280 kJ/mol for growth are obtained. Nucleation rates are observed to increase with annealing time, whereas the growth rate depends on the annealing temperature and the crystallographic growth direction. Copyright © 1978 WILEY‐VCH Verlag GmbH & Co. KGaA

Date

01 Jan 1978

Publication

physica status solidi (a)

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