About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physica B+C
Paper
Correlated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP
Abstract
DLTS and EPR measurements were done on the same samples of Zn-doped GaP, both as grown and irradiated with 2 MeV electrons. An irradiation induced trap measured by DLTS with thermal activation energy of 0.64 eV for the emission of a hole to the valence band was found to have the same introduction rate and annealing temperature as the EPR signal NRL1, attributed to VGa. © 1983.