Correlated DLTS and EPR measurements of defects in As-grown and electron irradiated p-type GaP

DLTS and EPR measurements were done on the same samples of Zn-doped GaP, both as grown and irradiated with 2 MeV electrons. An irradiation induced trap measured by DLTS with thermal activation energy of 0.64 eV for the emission of a hole to the valence band was found to have the same introduction rate and annealing temperature as the EPR signal NRL1, attributed to VGa. © 1983.