Comparison of large-scale layer-relaxation simulations with experiment

Abstract

The strain relaxation in SiGe layers was investigated by using fundamental dislocation theory. The calculations on strain relaxation were carried out based on a discrete dislocation dynamics code. The method accurately predicted the degree of strain relief and the nature of the final dislocation configurations. It was observed that for all film thickness, the layers relaxed to a residual strain equal to about twice the critical strain.