Conference paper
Modeling of dislocations in an epitaxial island structure
X.-H. Liu, F.M. Ross, et al.
MRS Proceedings 2001
The strain relaxation in SiGe layers was investigated by using fundamental dislocation theory. The calculations on strain relaxation were carried out based on a discrete dislocation dynamics code. The method accurately predicted the degree of strain relief and the nature of the final dislocation configurations. It was observed that for all film thickness, the layers relaxed to a residual strain equal to about twice the critical strain.
X.-H. Liu, F.M. Ross, et al.
MRS Proceedings 2001
Paul M. Solomon, Isaac Lauer, et al.
IEEE Electron Device Letters
Marwan Khater, J. Cai, et al.
VLSI Technology 2010
S.J. Koester, R. Hammond, et al.
EDMO 1999