Core-level photoemission studies of MBE-grown semiconductor surfaces

Abstract

The photoemission spectra of Ga3d, As3d and Sb4d core levels reveal a rich surface-derived substructure which is due to changes in the surface bonding environment and indicates one or more surface bonding sites per surface atom. Bulk and surface contributions have been separated and used to determine the stoichiometry of several GaAs(100) surfaces. © 1983.