About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Physica B+C
Paper
Core-level photoemission studies of MBE-grown semiconductor surfaces
Abstract
The photoemission spectra of Ga3d, As3d and Sb4d core levels reveal a rich surface-derived substructure which is due to changes in the surface bonding environment and indicates one or more surface bonding sites per surface atom. Bulk and surface contributions have been separated and used to determine the stoichiometry of several GaAs(100) surfaces. © 1983.