About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
Conductance extrema in metal - insulator - semiconductor tunnel junctions
Abstract
The conductance in metal - insulator - degenerate semiconductor tunnel junctions is obtained and analyzed. Regions of various shapes of the conductance are determined by use of two reduced parameters. For relatively light degeneracy and high barrier, a conductance minimum occurs at the Fermi energy. Otherwise, a minimum may occur at a voltage equal to or smaller than the Fermi energy and an additional pair of extrema may exist, depending on the type of the semiconductor and the nature of the insulator band edges in providing the tunneling barrier. © 1968 The American Institute of Physics.