Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
The effects of an electric field on the excitons in GaAs-GaAlAs quantum-well heterostructures have been studied by means of low-temperature photoluminescence and photocurrent spectroscopy. Increasing the electric field causes a red shift of the excitonic luminescence to energies well below the bulk GaAs band edge, and a corresponding decrease of the total luminescence efficiency. We find very good agreement between the energy thresholds obtained by luminescence and photocurrent measurements. A significant shift of the luminescence relative to the photocurrent is observed at high fields as a result of enhanced bound-exciton luminescence when electrons and holes move closer to the interfaces. © 1986 The American Physical Society.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Mark W. Dowley
Solid State Communications
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials