Publication
IWJT 2011
Conference paper

Cold (100°C) carbon co-implantation into high phosphorus doping source/drain extensions for aggressively scaled NFETs

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Abstract

A 100°C carbon co-implantation into phosphorus-doped source/drain extensions has been developed, providing for low junction leakage. NFETs made using cold carbon co-implantation and ultra-low energy phosphorus ion implantation showed high activation (Rs∼ 500 ohm/sq) and sub-20 nm depth abrupt N+ junction. © 2011 IEEE.

Date

01 Sep 2011

Publication

IWJT 2011

Authors

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