CMOS-embedded lasers for advanced silicon photonic devices

Abstract

Realizing CMOS-compatible integrated lasers on silicon is a crucial step towards cost-efficient, high-functional optoelectronic integrated circuits (OEICs). Here, we report on a concept to embed active optical devices based on a bonded III-V epitaxial layer stack between the FEOL and BEOL of a CMOS silicon photonics chip. Ultra-shallow laser devices are realized with this concept and optically-pumped lasing, coupled to silicon is demonstrated for the first time with such a concept.