Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
As semiconductor devices decrease in size, soft errors are becoming a major issue that must be addressed at all stages of product definition. Even before prototype silicon chips are available for measuring, modeling must be able to predict soft-error rates with reasonable accuracy. As the technology matures, circuit test sites are produced and experimentally tested to determine representative fail rates of critical SRAM and flip-flop circuits. Circuit models are then fit to these experimental results and further test-site and product circuits are designed and modeled as needed. © Copyright 2008 by International Business Machines Corporation.
Donald Samuels, Ian Stobert
SPIE Photomask Technology + EUV Lithography 2007
Anupam Gupta, Viswanath Nagarajan, et al.
Operations Research
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
Indranil R. Bardhan, Sugato Bagchi, et al.
JMIS