K. Hofmann, G.W. Rubloff, et al.
Applied Physics Letters
Growth of rough polycrystalline silicon films has been achieved on SiO 2 surfaces over a broad temperature range (≥100°C) using SiH4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial growth (on SiO2) and domination of growth by surface reaction (cf. gas phase).
K. Hofmann, G.W. Rubloff, et al.
Applied Physics Letters
G.W. Rubloff
Physical Review B
G.W. Rubloff, R.M. Tromp, et al.
Applied Physics Letters
T.C. Leung, Y. Kong, et al.
Applied Physics Letters