Chemical vapor deposition of rough-morphology silicon films over a broad temperature range

Abstract

Growth of rough polycrystalline silicon films has been achieved on SiO 2 surfaces over a broad temperature range (≥100°C) using SiH4 chemical vapor deposition at low pressures (mTorr range), with smaller grain structure and roughness length scale achieved at lower temperatures. Rough morphology over a broad temperature range is attributed to the combination of nucleation-controlled initial growth (on SiO2) and domination of growth by surface reaction (cf. gas phase).