Publication
Journal of Applied Physics
Paper

Charge injection from polycrystalline silicon into SiO2 at low fields

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Abstract

Electron injection from polycrystalline silicon into thermal SiO 2 at low fields is observed in polycrystalline-silicon-SiO 2-Si capacitors. C-V, pulsed-charge injection, and charge-relaxation measurements show that the injected electrons are captured by centers in the SiO2. These trapping centers appear to be located at about 30 Å from the polycrystalline-silicon-SiO2 interface and are characterized by an energy level approximately 0.3 eV above the Fermi level of the degenerate n-type polycrystalline silicon. Annealing of the samples in nitrogen or forming gas strongly affects the charge injection.

Date

26 Aug 2008

Publication

Journal of Applied Physics

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