Publication
IWJT 2018
Conference paper

Characterizing junction profiles in Ge photodetectors using scanning capacitance microscopy (SCM) and electron holography

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Abstract

Scanning Capacitance Microscopy (SCM) and dual lens electron holography have been used to investigate poor responsivity in germanium p-i-n photodetectors by measuring the carrier profiles and electric potential, respectively. For one case study, SCM results revealed two significant observations in a poor responsivity photodetector: (1) a shifting junction position across the intrinsic region at different cross sectional planes of the diode, (2) the intrinsic region is lowly doped and exhibits a 'folded' junction geometry, namely, the intrinsic region consists of p-type carriers along the edges while n-type dominates the central portion. On the other hand, Holography results revealed a narrow intrinsic region than designed and an insignificant difference in width between good and poor responsivity photodetectors.

Date

02 Apr 2018

Publication

IWJT 2018

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