Conference paperCharacterizing junction profiles in Ge photodetectors using scanning capacitance microscopy (SCM) and electron holographyJ. Nxumalo, Yun-Yu Wang, et al.IWJT 2018
Conference paperFINFET technology featuring high mobility SiGe channel for 10nm and beyondDechao Guo, G. Karve, et al.VLSI Technology 2016
PaperImpact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devicesShahab Siddiqui, Min Dai, et al.JVSTB
PaperNanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holographyYun-Yu Wang, David Cooper, et al.Applied Physics Letters
