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Publication
Electronic Engineering (London)
Review
Carrier mobility enhancement in strained silicon-on-insulator
Abstract
The carrier mobility and enhancement in strained Silicon-On-Insulator (SOI) technology were discussed. The strained SOI technology take the advantage of the natural tendency for atoms inside compounds to align to one another. The analysis showed that in the strained silicon, electrons experienced less resistance and flow up to 70% faster which lead to chips that were up to 35% faster.