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Journal of Non-Crystalline Solids
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Raman scattering in amorphous Si, Ge and III-V semiconductors

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Abstract

A phenomenological explanation of Raman scattering in amorphous Si, Ge and III-V semiconductors is given, using Si as an example. Several applications of Raman scattering to the study of amorphous materials are discussed. © 1972.

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Journal of Non-Crystalline Solids

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