Publication
Physical Review Letters
Paper

Bond Breaking and the Ionization of Sputtered Atoms

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Abstract

We have studied the static-mode ion-beam sputtering of Si+ from a Si (100) surface during oxidation and nitridation. The data are consistent with the ionization of sputtered atoms resulting from the breaking of the local chemical bond during sputtering. A model is proposed to explain the dependences of the ionization probability of the ionization potential, emission energy, and isotopic mass. © 1986 The American Physical Society.

Date

22 Sep 1986

Publication

Physical Review Letters

Authors

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