Blistering of silicon due to argon bombardment has been observed at implantation energies above about 100 keV. Above about 200 keV rupture of blisters becomes the predominant surface damage phenomenon. Blistering effects are most obvious upon first appearance. Further bombardment causes the occurrence of new generations of blisters accompanied by oscillations in argon content of the silicon backing. The effects are interpreted in terms of argon agglomeration, build-up of critical argon pressures, argon release from near-surface regions, and sputtering.