Bias Temperature Instability model for digital circuits - Predicting instantaneous FET response

Abstract

We propose a semi-empirically enhanced BTI model to predict the instantaneous shift in VT due to both NBTI (in PFETs) and PBTI (in NFETs). Our proposed model uses same technology parameters as in existing model, and applied for both NBTI and PBTI. At every step of model generation, we demonstrate the correlation between our model and measured hardware. Further, we discuss the necessary steps to integrate our model with existing digital circuit simulators. © 2011 IEEE.