(Ba,Sr)TiO₃ dielectrics for future stacked-capacitor DRAM

Abstract

Thin films of BSTO show potential for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This report discusses progress made in the preparation of BSTO films by liquid-source metal-organic chemical vapor deposition (LS-MOCVD) and the issues related to integrating films of BSTO into a DRAM capacitor. Mechanisms influencing specific capacitance and charge loss of BSTO films are described, as are the requirements for the electrode and barrier materials used in stacked-capacitor structures.