E. Burstein
Ferroelectrics
The miniaturization of integrated circuit devices requires complex multilevel structures for the fabrication oftheir electrical contacts. Aluminum is the standard metal used in silicon device technology for low resistance interconnections. However, the low temperature reaction of aluminum with silicon makes aluminium contacts incompatible with shallow junction device processing. Therefore, a barrier layer is needed between the two. The basic function of the barrier layer is to prevent aluminum-silicon intermixing by reducing the mass transport. The realization of this property is discussed from a materials point of view. Various barrier materials are surveyed and compared to the requirements for microelectronics device applications. © 1984, American Vacuum Society. All rights reserved.
E. Burstein
Ferroelectrics
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Sharee J. McNab, Richard J. Blaikie
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