About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ESSDERC 2016
Conference paper
Ballistic transport and high thermopower in one-dimensional InAs nanowires
Abstract
Electrical transport and thermoelectric properties of thin indium arsenide nanowires have been investigated in the temperature range between 100 K and 365 K. Charge carrier concentration was varied by a back-gate electrode. In nanowires with a diameter of 20 nm, discrete conductance plateaus are observed at low temperature indicating one-dimensional quantization of the density of states. A mean free path of 135 nm is extracted. At room temperature, the one-dimensional nature leads to drastically enhanced thermoelectric properties. A 100 % increase of the thermoelectric power factor σS2 (calculated from the electrical conductivity σ and the Seebeck coefficient S) is obtained in the nanowires compared to bulk InAs bulk material.