Publication
Journal of Applied Physics
Paper

Attenuated total reflectance study of silicon-rich silicon dioxide films

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Abstract

The infrared absorption of Si-rich SiO2 films has been measured using the attenuated total reflection technique. Absorption lines attributed to SiOH, H2O, and SiH groups have been observed in the as-deposited films. The concentrations of the SiOH and H2O impurities were found to be in the low 1021 cm-3 range, and the concentration of the SiH impurity was found to be 1018 cm-3. Following a 1000 C anneal 1019 cm-3 and 1016 cm -3 ranges, respectively.

Date

09 Jul 2008

Publication

Journal of Applied Physics

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