Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A low-energy-electron-diffraction intensity analysis of a clean and annealed {110} surface of Ni3Al reveals that the first layer is 50% Ni-50% Al and that the second layer is 100% Ni. In the first layer, the Ni and Al subplanes are slightly separated from one another by 0.02±0.03 A, the Al atoms being outwards from the bulk. The first interlayer distance, as measured from the Ni subplane, is contracted by 0.15±0.03 A (11.9% of the bulk value, 1.26 A). The second interlayer distance is expanded by 0.04±0.03 A (3% of the bulk value). The r-factor values for normal (0.14) and oblique (0.13) incidence indicate a very good fit of theory to experiment. © 1986 The American Physical Society.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids