G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Atomically-resolved cross-sectional topographic images of AlGaAs/GaAs multilayers, which includes a sequence of 1, 2, 5, and 10 nm AlGaAs and GaAs layers, have been made using a scanning tunneling microscope. All the layers appear distinct and the dimensions of the as-grown layers can be accurately measured. Furthermore, alloy fluctuations and interface roughness over 2 nm length scales and ordering along certain directions are clearly observed. © 1993.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010