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Publication
Microelectronic Engineering
Paper
Atomic layer deposition of Ge2Sb2Te5 thin films
Abstract
Ge2Sb2Te5 (GST) thin films were deposited by Atomic Layer Deposition (ALD) method using a novel alkylsilyl tellurium precursor. Film composition was studied with time-of-flight elastic recoil detection analysis (TOF-ERDA) and energy dispersive x-ray analysis. Phase change properties of the films were characterised by high-temperature X-ray diffraction and laser based crystallization measurements. Crystallization properties of ALD GST were found to be similar to sputter-deposited films. © 2009 Elsevier B.V. All rights reserved.