R. Martel, Th. Schmidt, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We use scanning tunneling microscopy to investigate the reactivity of the dangling-bond states of Si(111)-(7×7). The reaction with NH3 is used as a prototype. We find that Si rest atoms are more reactive than Si adatoms and that center adatoms are more reactive than corner adatoms. Using atom-resolved electronic spectra, we probe the dangling-bond states on both clean and NH3-exposed surfaces. We find significant interactions and charge transfer between sites which strongly influence surface reactivity. © 1988 The American Physical Society.
R. Martel, Th. Schmidt, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Ph. Avouris, D.S. Bethune, et al.
Journal of Photochemistry
Ph. Avouris, D.S. Bethune, et al.
The Journal of Chemical Physics
S.J. Wind, M. Radosavljević, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures