Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples

Abstract

The two-dimensional device simulation program QDAME has been extended to permit arbitrary crystallographic orientation. A ballistic formulation of quantum transport utilizing parabolic, ellipsoidal conduction bands is adopted and solved self-consistently with the Poisson equation. Results for Ge DGFETs with 7.5 nm channel length are used to demonstrate the approach. © Springer Science + Business Media, Inc. 2004.