About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Angular spectrum tailoring in solid immersion microscopy for circuit analysis
Abstract
We present a technique that involves tailoring the angular spectrum in optical microscopy of silicon integrated circuits, with a solid immersion lens. Spatial light modulation to select only supercritical light at the substrate/dielectric interface yields only evanescent and scattered light in the interconnect layers. We demonstrated the technique in optical excitation microscopy of 65 nm silicon-on-insulator circuits, which enabled localization of a fault during microprocessor development. Acquiring images with and without angular spectrum tailoring allowed longitudinal localization of the electrical response to optical excitation. Lateral registration of electrical response and confocal reflection images to the circuit layout was also significantly improved. © 2008 American Institute of Physics.