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Publication
Journal of Applied Physics
Paper
Analytic drain current model for III-V cylindrical nanowire transistors
Abstract
An analytical model is proposed to determine the drain current of III-V cylindrical nanowires (NWs). The model uses the gradual channel approximation and takes into account the complete analytical solution of the Poisson and Schrödinger equations for the Γ-valley and for an arbitrary number of subbands. Fermi-Dirac statistics are considered to describe the 1D electron gas in the NWs, being the resulting recursive Fermi-Dirac integral of order -1/2 successfully integrated under reasonable assumptions. The model has been validated against numerical simulations showing excellent agreement for different semiconductor materials, diameters up to 40nm, gate overdrive biases up to 0.7V, and densities of interface states up to 1013eV-1cm-2.