About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Integrated Ferroelectrics
Paper
Analysis of a fence-free platinum etch process
Abstract
In a previous study we describe a high flow. Cl2-rich dry etch (DE) process which yields fence-free Pt etch structures. In that work we identify the existence of a transient fence defect, and show that it can cause the formation of an extremely shallow sidewall in the fully etched structure. We now expand upon this effort by documenting how several of the key DE parameters individually influence the sidewall profile. Through a series of four experiments, we found that: (a) the inclusion of Ar into the Cl2/CF4 gas mix promotes the formation of fencing; (b) insufficient total gas flow induces DE cone formation localized to the sidewalls of the etched Pt electrodes; (c) the inclusion of CF4 in the gas mix is unnecessary; and (d) the choice of self-bias voltage influences the critical dimension control and sidewall angle of the etched Pt electrodes.