Publication
IEEE Transactions on Electronic Computers
Paper

An Investigation of the Potential of MOS Transistor Memories

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Abstract

The design and performance characteristics of a 128X64 MOS transistor memory is given. The storage cell used operates with a low standby power, 0.1 mW. The memory operates with a 12-ns access time, 35-ns read cycle time, and a 60-ns write cycle time. Copyright © 1966 by The Institute of Electrical and Electronics Engineers, Inc.

Date

01 Jan 1966

Publication

IEEE Transactions on Electronic Computers

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