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Publication
IEEE TNS
Paper
An investigation of single event transient response in 45-nm and 32-nm SOI RF-CMOS devices and circuits
Abstract
This paper uses charge deposition by two-photon absorption to present the first investigation of the physical mechanisms underlying the single event transient (SET) response of cascode structures in a 45-nm RF-CMOS/SOI technology, provides the first experimental comparison of SET between 45-nm and 32-nm RF-CMOS/SOI devices, and presents implications for circuit design in both technologies. This work leverages a number of different device types and is supported by calibrated TCAD simulations. © 2013 IEEE.