Publication
IEEE TCADIS
Paper

An Efficient Numerical Algorithm for Simulation of MOS Capacitance

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Abstract

A new, computationally efficient method for the numerical evaluation of the equilibrium capacitance of one-dimensional MOS structures is presented. Capacitance-voltage (C-V) characteristics for arbitary impurity profiles and interface state distributions can be calculated for temperatures ranging from 50 K to 350 K. Examples of simulated C-V characteristics demonstrate the capability of the computer program MOSCAP using these techniques. © 1983 IEEE

Date

01 Jan 1983

Publication

IEEE TCADIS

Authors

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