Simulation of Impurity Freezeout Through Numerical Solution of Poisson's Equation with Application to MOS Device Behavior

Abstract

Incorporation of temperature dependencies in the one-dimensional Poisson's equation for use in numerical simulation of MOSFET threshold behavior from 350 to 50 K is discussed. Careful consideration has been given to accurate modeling of impurity freezeout and temperature-dependent parameters. Examples of simulation of depletion-mode MOSFET's demonstrate the importance of proper modeling and show that impurity freezeout must be considered even at room temperature. Copyright © 1980 by The Institute of Electrical and Electronics Engineers, Inc.