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Publication
ESSDERC 2008
Conference paper
An analytical model for intrinsic carbon nanotube FETs
Abstract
A simple and efficient model of carbon nanotube field effect transistor (CNFET) is necessary to perform system-level optimization. In this paper, an analytical model with no iteration or integration is developed, including an analytical electrostatic model for the surface potential and simplification of scattering effects. The model is computationally efficient, but includes essential physics such as DIBL effect and scattering. © 2008 IEEE.