S.-L. Zhang, C. Lavoie, et al.
Journal of Applied Physics
The characteristics of carbon nanotube field-effect transistors (CNFFTs) made of s-single-wall carbon nanotubes (SWNTs) contacted to titanium carbide (TiC) and passivated with a uniform SiO2 layer were determined. It was found that the apparent barrier height for carrier injection is modulated by the gate field. Furthermore, it was observed that the usual p-type character of CNFETs is a property of the nanotube-metal junction.
S.-L. Zhang, C. Lavoie, et al.
Journal of Applied Physics
K.L. Kavanagh, R.S. Goldman, et al.
Journal of Crystal Growth
R. Martel, T. Schmidt, et al.
Applied Physics Letters
C. Detavernier, C. Lavoie, et al.
Journal of Applied Physics