Ambipolar electrical transport in semiconducting single-wall carbon nanotubes

Abstract

The characteristics of carbon nanotube field-effect transistors (CNFFTs) made of s-single-wall carbon nanotubes (SWNTs) contacted to titanium carbide (TiC) and passivated with a uniform SiO2 layer were determined. It was found that the apparent barrier height for carrier injection is modulated by the gate field. Furthermore, it was observed that the usual p-type character of CNFETs is a property of the nanotube-metal junction.