J.-S. Chun, J.R.A. Carlsson, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
Abstract
The characteristics of carbon nanotube field-effect transistors (CNFFTs) made of s-single-wall carbon nanotubes (SWNTs) contacted to titanium carbide (TiC) and passivated with a uniform SiO2 layer were determined. It was found that the apparent barrier height for carrier injection is modulated by the gate field. Furthermore, it was observed that the usual p-type character of CNFETs is a property of the nanotube-metal junction.
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