Al_xGa_1-xas grown-diffused electroluminescent planar monolithic diodes

Abstract

AlxGa1-xAs p-n junctions have been grown on p-type GaAs substrates by the push-pull liquid-phase-epitaxy method. Zn was subsequently diffused to form planar monolithic grown-diffused p-n junctions which produce high-efficiency light with excellent luminance characteristics. A description will be given of the preparation and processing of the structures. The properties of the epitaxial layers and the grown-diffused p-n junctions will be discussed. © 1972 The American Institute of Physics.