PaperInterface kinetics and crystal growth under conditions of constant cooling rate. I. Constant diffusion coefficientR. Ghez, J.S. LewJournal of Crystal Growth
Conference paperNEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.S. Cohen, T.O. Sedgwick, et al.MRS Proceedings 1983
PaperThe boundary contour method for three-dimensional linear elasticityA. Nagarajan, S. Mukherjee, et al.Journal of Applied Mechanics, Transactions ASME