Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
The interactions of epitaxial Al-films with GaAs (100) surfaces, prepared by molecular beam epitaxy, have been investigated using a variety of surface sensitive techniques: Auger electron spectroscopy, electron energy-loss spectroscopy and reflection high energy electron diffraction. Depending on the substrate temperature, two entirely different reactions are observed, which result in two different crystallographic orientations of the Al-film. At elevated temperature a Ga-Al exchange reaction, similar to that reported for Al on the GaAs (110) surface, takes place. However, with the substrate near room temperature no evidence for such a reaction is found. The results are substantiated by comparison with measurements on thin Ga overlayers on AlAs, prepared to simulate surfaces with exchange reaction geometry. © 1981.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry