About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Solid-State Electronics
Paper
Aging effects in GaAs electroluminescent diodes
Abstract
It has been reported that radiation from GaAs electroluminescent diodes operated under forward bias conditions gradually decreases with time. This paper, which is a more comprehensive study of the effect, describes the results of a large-scale, systematic aging study (800 diodes, aged from 1600 to 8000 hr) for a wide range of fabrication parameters and stress conditions. The fabrication variables encompass junction formation, surface preparation, encapsulation, and crystal types. The stress conditions include current densities from 0 to 500 A/cm2 at room temperature and from 0 to 130 A/cm2 at 65°C. The effect of the above parameters on the rate of decay of the light output is presented. A marked decrease in the light decay rate is found for diodes which had the junction prepared by solution growth techniques. © 1967.