TalkDirect electrical access to the spin manifolds of individual lanthanide atomsGregory Czap, Kyungju Noh, et al.APS Global Physics Summit 2025
Conference paperNEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.S. Cohen, T.O. Sedgwick, et al.MRS Proceedings 1983
PaperSchottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theoriesA.B. McLean, R.H. WilliamsJournal of Physics C: Solid State Physics
