A transient capacitance study of radiation‐induced defects in aluminum‐doped silicon

Abstract

Diodes are fabricated from aluminum‐doped Czochralski‐grown silicon, are electron irradiated at room temperature, and are studied using the DLTS technique. The divacancy, the carbon interstitial, and the carbon–oxygen–vacancy complex, all previously observed in boron‐doped Cz silicon, are observed as well as several defects unique to aluminum‐doped silicon. The results are quite different from those reported for aluminum‐doped float zone silicon, however. Copyright © 1980 WILEY‐VCH Verlag GmbH & Co. KGaA