About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Applied Physics
Paper
A simple model for the hysteretic behavior of ZnS:Mn thin film electroluminescent devices
Abstract
A model is proposed for the observed hysteretic behavior of ac-coupled ZnS:Mn thin-film electroluminescent devices. The following mechanisms are invoked: (1) tunnel injection from ZnS-dielectric interfaces (E4106 V/cm), (2) electron-hole pair generation, (3) deep trapping of holes, leading to space-charge formation, (4) charge storage at the ZnS-dielectric interfaces, and (5) direct recombination of injected electrons and trapped holes. When these mechanisms are combined in a self-consistent numerical simulation model, a bistability of charge transfer versus applied voltage is obtained which exhibits many of the characteristics of the observed device behavior. Experimental evidence in support of the individual assumptions is also discussed.